Observation of H/sup +/ motion during interface trap formation
نویسندگان
چکیده
منابع مشابه
simulation and experimental studies for prediction mineral scale formation in oil field during mixing of injection and formation water
abstract: mineral scaling in oil and gas production equipment is one of the most important problem that occurs while water injection and it has been recognized to be a major operational problem. the incompatibility between injected and formation waters may result in inorganic scale precipitation in the equipment and reservoir and then reduction of oil production rate and water injection rate. ...
Neural circuits underlying motor facilitation during observation of implied motion.
In the present study we used single and paired-pulse Transcranial Magnetic Stimulation (TMS) to evaluate the effect of implied motion on primary motor cortex microcircuits. We found that observation of the implied motion of a static image increases MEP amplitude and reduces short-interval intracortical inhibition (SICI), without significant modulation of intracortical facilitation and sensory-m...
متن کاملSymmetric Singularity Formation in Lubrication-Type Equations for Interface Motion
Fourth order degenerate diiusion equations arise in a `lubrication approximation' of a thin lm or neck driven by surface tension. Numerical studies of the lubrication equation (LE) ht + (h n hxxx)x = 0 with various boundary conditions indicate that singularity formation in which h(x(t);t) ! 0 occurs for small enough n withànomalous' or`second type' scaling inconsistent with usual dimensional an...
متن کاملIn situ observation of antisite defect formation during crystal growth.
In situ x-ray diffraction (XRD) coupled with molecular dynamics (MD) simulations have been used to quantify antisite defect trapping during crystallization. Rietveld refinement of the XRD data revealed a marked lattice distortion which involves an a axis expansion and a c axis contraction of the stable C11b phase. The observed lattice response is proportional in magnitude to the growth rate, su...
متن کاملIn situ ESR observation of interface dangling bond formation processes during ultrathin SiO2 growth on Si(111).
We report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center density reached around 2.5-3.0 x 10(12) cm(-2), which is the same density as in the case of thick SiO2. This result shows that the Pb center density do...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 1990
ISSN: 0018-9499,1558-1578
DOI: 10.1109/23.101170